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PD -97344
IRFS3107-7PPBF
HEXFET(R) Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
D
G S
VDSS RDS(on) typ. max. ID ID (Package Limited)
D
75V 2.1m 2.6m 260A 240A
S G S S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
260 190 240 1060 370 2.5 20 13 -55 to + 175 300 10lbxin (1.1Nxm) 320 See Fig. 14, 15, 22a, 22b,
Units
A
W W/C V V/ns C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ
Thermal Resistance
Symbol
RJC RJA
Parameter
Junction-to-Case jk Junction-to-Ambient (PCB Mount) ij
Typ.
--- ---
Max.
0.40 40
Units
C/W
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1
10/07/08
IRFS3107-7PPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG(int)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
75 --- --- 2.0 --- --- --- ---
---
Conditions
--- --- 0.083 --- 2.1 2.6 --- 4.0 --- 20 --- 250 --- 100 --- -100 2.1 ---
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAc m VGS = 10V, ID = 160A f V VDS = VGS, ID = 250A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
--- 160 38 57 103 17 80 100 64 9200 850 400 1150 1500 --- 240 --- --- --- --- --- --- --- --- --- --- --- --- S nC
Conditions
VDS = 25V, ID = 160A ID = 160A VDS = 38V VGS = 10V f ID = 160A, VDS =0V, VGS = 10V VDD = 49V ID = 160A RG = 2.7 VGS = 10V f VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V h VGS = 0V, VDS = 0V to 60V g
260 --- --- --- --- --- --- --- --- --- --- --- Effective Output Capacitance (Energy Related)h --- --- Effective Output Capacitance (Time Related)g
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- 260 1060 A
Conditions
MOSFET symbol showing the integral reverse
G S D
--- --- 1.3 V --- 52 --- ns --- 63 --- --- 110 --- nC TJ = 125C --- 160 --- --- 3.8 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V f TJ = 25C VR = 64V, TJ = 125C IF = 160A di/dt = 100A/s f TJ = 25C
Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.026mH RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value . ISD 160A, di/dt 1420A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom R is measured at TJ approximately 90C. RJC value shown is at time zero.
Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994.
2
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IRFS3107-7PPBF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
4.5V
100
100
4.5V
60s PULSE WIDTH
Tj = 25C 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 10 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
Fig 2. Typical Output Characteristics
2.5 ID = 160A VGS = 10V 2.0
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175C
10
T J = 25C
1.5
1 VDS = 25V 60s PULSE WIDTH 2 3 4 5 6 7 8
1.0
0.1
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= 160A
VGS , Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
VDS= 60V VDS= 38V
C, Capacitance (pF)
10000
Ciss Coss
1000
Crss
100 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0
25
50
75 100 125 150 175 200 225
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFS3107-7PPBF
1000 T J = 175C 100 10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
10msec 1msec
10
T J = 25C
10
DC
1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
1
Tc = 25C Tj = 175C Single Pulse 1 10 100 1000
0.1 VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
300 Limited By Package 250
ID, Drain Current (A)
Fig 8. Maximum Safe Operating Area
95 Id = 5mA 90
200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
85
80
75
70 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
3.5 3.0 2.5
Energy (J)
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10. Drain-to-Source Breakdown Voltage
1400 1200 1000 800 600 400 200 0 ID 28A 50A BOTTOM 160A TOP
2.0 1.5 1.0 0.5 0.0 -10 0 10 20 30 40 50 60 70 80
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
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IRFS3107-7PPBF
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
Ri (C/W)
0.01083 0.05878 0.15777 0.17478
i (sec)
0.00001 0.000086 0.001565 0.011192
1
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
0.05 10 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
350 300
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 160A
250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFS3107-7PPBF
4.5
VGS(th) , Gate threshold Voltage (V)
30 25 20
IRR (A)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) ID = 250A ID = 1.0mA ID = 1.0A
IF = 106A V R = 64V TJ = 25C TJ = 125C
15 10 5 0 0 200 400 600 800 1000 diF /dt (A/s)
Fig 16. Threshold Voltage vs. Temperature
30 25 20
IRR (A)
Fig. 17 - Typical Recovery Current vs. dif/dt
1000 IF = 106A V R = 64V TJ = 25C TJ = 125C
IF = 160A V R = 64V TJ = 25C TJ = 125C
Q RR (A)
900 800 700 600 500 400 300 200
15 10 5 0 0 200 400 600 800 1000 diF /dt (A/s)
100 0 200 400 600 800 1000 diF /dt (A/s)
Fig. 18 - Typical Recovery Current vs. dif/dt
1000 900 800 700
Q RR (A)
Fig. 19 - Typical Stored Charge vs. dif/dt
IF = 160A V R = 64V TJ = 25C TJ = 125C
600 500 400 300 200 0 200 400 600 800 1000 diF /dt (A/s)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFS3107-7PPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
VDS VGS RG RD
Fig 22b. Unclamped Inductive Waveforms
VDS 90%
D.U.T.
+
- VDD
V10V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 23a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 23b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
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Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
IRFS3107-7PPBF
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFS3107-7PPBF
D2Pak - 7 Pin Part Marking Information
14
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/08
9

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